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MMJT350T1 Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Features
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* High Collector-Emitter Sustaining Voltage - * * * *
VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb-Free Package is Available
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 2.75 WATTS
C 2,4
B1
E3
Schematic
4 1
2 3
SOT-223 CASE 318E STYLE 1
MARKING DIAGRAM
AYW T350 G G
A = Assembly Location Y = Year W = Work Week G = Pb-Free Package T350 = Device Code (Note: Microdot may be in either location)
ORDERING INFORMATION
Device MMJT350T1 MMJT350T1G Package SOT-223 SOT-223 (Pb-Free) Shipping 1000 / Tape & Reel 1000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
January, 2006 - Rev. 2
Publication Order Number: MMJT350T1/D
MMJT350T1
II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol VCEO VCB VEB IC Value 300 300 3.0 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak 0.5 0.75 Total Power Dissipation @ TC = 25C Derate above 25C Total PD @ TA = 25C mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 2.75 22 1.40 0.65 W mW/C W W C TJ, Tstg - 55 to + 150
THERMAL CHARACTERISTICS
Characteristic
Symbol RqJC RqJA RqJA TL
Max 45 85 190
Unit
Thermal Resistance, - Junction-to-Case - Junction-to-Ambient on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material - Junction-to-Ambient on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds
C/W
260
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0 Adc) Collector-Base Current (VCB = Rated VCBO, VEB = 0) Emitter Cut-off Current (VBE = 5.0 Vdc) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) hFE 30 20 240 - - VCEO(SUS) ICBO IEBO 300 - - - 100 100 Vdc mAdc mAdc Symbol Min Max Unit
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MMJT350T1
200 TJ = 150C 25C -55 C 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V
hFE , DC CURRENT GAIN
100 70 50 30 20
0.4
IC/IB = 10
VCE = 2.0 V VCC = 10 V 20 30 50 70 100 200 300 500
0.2 VCE(sat) 0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5.0 200 300 500
10 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. "On" Voltages
V, TEMPERATURE COEFFICIENTS (mV/C)
IC, COLLECTOR CURRENT (mA)
1000 700 500 300 200 100 70 50 30 20 10 20 1.0 ms dc
+1.2 +0.8 +0.4 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 5.0 7.0 10 qVB for VBE -55 C to +25C 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 *qVC for VCE(sat) *APPLIES FOR IC/IB < hFE/4 +100 C to +150C +25 C to +100C
100 ms
-55 C to +25C +25 C to +150C
500 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 30 50 70 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active-Region Safe Operating Area
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
4.0 PD , POWER DISSIPATION (WATTS)
3.0 TC
2.0
1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (C)
Figure 5. Power Derating
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3
MMJT350T1
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE L
D b1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 -
4
HE
1
2
3
E
b e1 e q C
DIM A A1 b b1 c D E e e1 L1 HE
A 0.08 (0003) A1
q
MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0
MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0
MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10
L1
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
SOLDERING FOOTPRINT*
3.8 0.15 2.0 0.079
2.3 0.091
2.3 0.091
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
SCALE 6:1
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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MMJT350T1/D

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